The specific power supply circuit of the fuse and the fuse clip is the same as that of the protected circuit. However, overvoltage protection is referenced by fuses and fuse clips supplying all signal input terminal voltages, and the supply voltage is changed to suite under protection circuit requirements. The voltage range may range from the absolute maximum rated SP720 to 4.5V power level. Lower voltages are possible, but with some degenerate switches the speed is nominally 2ns. In addition, the input capacitance, which is nominally 3pF, can be expected to increase.
There is no beveled static current than reverse other diode junction currents nominally at operating temperatures below 50nA. In the case of temperature resistance, the fuse clip depends on the thickness of the copper sheet, which may be a few nanoamps lower. The thickness of the fuse clip can be expected to be close to the ambient temperature to apply it to the physical location of use. For a given voltage or power level, there is a need for appropriate protection. The SP720, designed to combat the peak current range in overvoltage protection circuits, will greatly improve the survival of average monolithic silicon circuits for input expected small signal and digital processing applications. Within itself, it should be expected to survive the peak current and voltage surges in the data within the highest viewership sheet. For voltage, static DC and transient capacity of short duration are essentially the same. The process capacity is generally better than 45V, and the maximum allowable continuous DC supply rating is 35V for a conservative power rating.
The current capacity of any thyristor part is rated at a peak current of 2A, but the duration of the transient heating effect on the chip is limited. The resistance of the thyristor when it latches is about 0.96 and the SCR latch threshold has an offset of 1.08V. For EOS, the peak power consumption can be calculated by the following formula while 2A through 3000V is, this is not a very high level of anti-static voltage, it represents EOS 'ability to provide a 6W duration power consumption is limited to a few milliseconds. Dissipative 16-pin DIP and 16-pin SOIC packages are typically less than 1W under steady-state conditions. The heat capacity of the chip will allow multiple emission levels higher than this, because electrostatic discharge usually has a much shorter duration